நியூக்ளியர் எனர்ஜி சயின்ஸ் & பவர் ஜெனரேஷன் டெக்னாலஜி ஜர்னல்

The Dependence of Charge Carriers on the Methods of Thermal Processing of Residence Time on Silicon, Legalized with Copper and Iridium

AK Rafikov*, SH A Maxmudov, AA Sulaymonov and JZ Mirzarayimov

In this work, we investigated the dependence of the concentration of centers of energy levels on the lifetime of charge carriers in silicon samples doped with copper and iridium, and the electrophysical, photoelectric and recombination properties of the sample under the influence of thermal and radiation exposure.